Molecular Beam Epitaxial Growth of Stress-released GaAs Layers on Si(001) Substrates
- 1 September 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (9A) , L1736
- https://doi.org/10.1143/jjap.27.l1736
Abstract
The heteroepitaxial growth of GaAs on Si substrates was studied by RHEED, X-ray diffraction, and stress gauge measurements. The conditions for the pseudomorphic growth of GaAs monolayers on Si was determined. The monolayer growth technique was used for the two-step growth of thick GaAs layers on Si substrates. Stress-released 2 µm thick GaAs films were obtained at a growth temperature of about 420°C.Keywords
This publication has 7 references indexed in Scilit:
- Dislocation microstructures on flat and stepped Si surfaces: Guidance for growing high-quality GaAs on (100) Si substratesApplied Physics Letters, 1988
- Sublattice allocation and antiphase domain suppression in polar-on-nonpolar nucleationJournal of Vacuum Science & Technology B, 1987
- Self-Annihilation of Antiphase Boundary in GaAs on Si(100) Grown by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1987
- Stress and Strain of GaAs on Si Grown by MOCVD Using Strained Superlattice Intermediate Layers and a Two-Step Growth MethodJapanese Journal of Applied Physics, 1987
- Epitaxial growth and material properties of GaAs on Si grown by MOCVDJournal of Crystal Growth, 1986
- Growth of GaAs on Si by MOVCDJournal of Crystal Growth, 1984
- Substrate effect on the lattice constants of the MBE-grown In1−xGaxAs and GaSb1−yAsyJournal of Vacuum Science and Technology, 1979