Epitaxial growth and material properties of GaAs on Si grown by MOCVD
- 1 September 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 77 (1-3) , 498-502
- https://doi.org/10.1016/0022-0248(86)90343-x
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Substrate effect on the lattice constants of the MBE-grown In1−xGaxAs and GaSb1−yAsyJournal of Vacuum Science and Technology, 1979
- Preferential Etching of GaAs Through Photoresist MasksJournal of the Electrochemical Society, 1976