MOCVD Growth of GaAs0.6P0.4 on Si Substrate
- 1 April 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (4A) , L297
- https://doi.org/10.1143/jjap.25.l297
Abstract
Single crystalline GaAs0.6P0.4 is grown on (100)2° off Si substrate by metalorganic chemical vapor deposition with the intermediate layers of GaP, (GaP/GaAsP) superlattice and (GaAsP/GaAs) superlattice. PL intensity of GaAs0.6P0.4/Si is about 40% of commercially available GaAs0.6P0.4 grown on GaAs substrate by VPE. Very smooth mirror-like surface is obtained and no crosshatch pattern such as is seen on GaAs0.6P0.4 on GaAs is observed on GaAs0.6P0.4/Si surface.Keywords
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