Electrical and optical properties of GaP grown on Si by MOVPE
- 1 September 1984
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 68 (1) , 340-344
- https://doi.org/10.1016/0022-0248(84)90435-4
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Electrical and optical properties of GaP grown on Si by MOVPEJournal of Crystal Growth, 1984
- Electrical and optical properties of deep levels in MOVPE grown GaAsJournal of Crystal Growth, 1981
- MO-CVD growth of GaP and GaAlPJournal of Crystal Growth, 1981
- Heteroepitaxial growth of gallium phosphide on siliconJournal of Electronic Materials, 1980
- The heteroepitaxial growth of GaP films on Si substratesJournal of Crystal Growth, 1977
- Heteroepitaxial growth of GaP on siliconJournal of Crystal Growth, 1975
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- Theory of a Wide-Gap Emitter for TransistorsProceedings of the IRE, 1957