Electrical and optical properties of deep levels in MOVPE grown GaAs
- 1 October 1981
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 55 (1) , 164-172
- https://doi.org/10.1016/0022-0248(81)90284-0
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- Preparation and properties of Ga1-xAlxAs-GaAs heterostructure lasers grown by metalorganic chemical vapor depositionIEEE Journal of Quantum Electronics, 1979
- Solubility and point defect-dopant interactions in GaAs —IJournal of Physics and Chemistry of Solids, 1979
- Revised calculation of point defect equilibria and non-stoichiometry in gallium arsenideJournal of Physics and Chemistry of Solids, 1979
- Deep Level Impurities in SemiconductorsAnnual Review of Materials Science, 1977
- Electron Transport Properties of GaxIn1-xSb Calculated by the Monte Carlo MethodJapanese Journal of Applied Physics, 1977
- An Examination of the Product Catalyzed Reaction of Trimethylgallium with Phosphine and the Mechanism of the Chemical Vapor Deposition of Gallium Phosphide and Gallium ArsenideJournal of the Electrochemical Society, 1977
- Electron traps in bulk and epitaxial GaAs crystalsElectronics Letters, 1977
- Device quality epitaxial gallium arsenide grown by the metal alkyl-hydride techniqueJournal of Crystal Growth, 1975
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- The Use of Metal-Organics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1969