Preparation and properties of Ga1-xAlxAs-GaAs heterostructure lasers grown by metalorganic chemical vapor deposition
- 1 March 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 15 (3) , 128-135
- https://doi.org/10.1109/jqe.1979.1069974
Abstract
No abstract availableKeywords
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