Photopumped laser operation of MO-CVD AlxGa1−xAs near a GaAs quantum well (λ≳6200 Å, 77 °K)
- 1 October 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (7) , 596-598
- https://doi.org/10.1063/1.90473
Abstract
Data are presented showing that AlxGa1−xAs (x∼0.42) grown by metalorganic chemical vapor deposition (MO‐CVD) will operate as a photopumped laser to wavelengths as short as ∼6200 Å (77 °K). From the different spectral behavior of two separately photopumped epitaxial AlxGa1−xAs (x∼0.36) confining layers (1 and 0.3 μm thick) with an 80‐Å (and a comparison 200‐Å) GaAs quantum‐well center layer, the recombination of hot electrons with holes collected in the quantum layer is used to estimate ΔEv.Keywords
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