Investigations on resonant tunneling in III-V heterostructures
- 1 July 1989
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 66 (1) , 278-285
- https://doi.org/10.1063/1.343869
Abstract
We present data obtained on a set of symmetric GaAs/AlGaAs double‐barrier quantum‐well structures in which the thickness of the AlGaAs barriers has been systematically varied from 31 to 7.5 nm. Low‐temperature I(V ) characteristics, temperature dependencies, and magnetotunneling have been investigated. Our data suggest a dominance of sequential tunneling processes in the range investigated and point to interface roughness in the well as the possible cause for the large valley currents. Our best devices exhibit a current peak‐to‐valley ratio of about 20.This publication has 13 references indexed in Scilit:
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