Thermal Mismatch Strain Relaxation Mechanisms and Hysteresis in Pb1−SnxSe-on-CaF2/Si Structures
- 1 January 1995
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Thermal-mismatch-strain relaxation in epitaxial , /, and PbSe// layers on Si(111) after many temperature cyclesPhysical Review B, 1994
- Photovoltaic lead-chalcogenide on silicon infrared sensor arraysOptical Engineering, 1994
- The measurement of threading dislocation densities in semiconductor crystals by X-ray diffractionJournal of Crystal Growth, 1994
- Thermal-mismatch strain relaxation mechanisms in heteroepitaxial lead chalcogenide layers on Si substratesSemiconductor Science and Technology, 1993
- Lattice and thermal misfit dislocations in epitaxial /Si(111) and -/Si(111) structuresPhysical Review Letters, 1992
- Infrared sensor arrays with 3-12 mu m cutoff wavelengths in heteroepitaxial narrow-gap semiconductors on silicon substratesIEEE Transactions on Electron Devices, 1991
- A criterion for arrest of a threading dislocation in a strained epitaxial layer due to an interface misfit dislocation in its pathJournal of Applied Physics, 1990
- Rapid variation in epilayer threading dislocation density near x = 0·4 in GexSi1−xon (100) SiPhilosophical Magazine Letters, 1990