Infrared sensor arrays with 3-12 mu m cutoff wavelengths in heteroepitaxial narrow-gap semiconductors on silicon substrates
- 1 May 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (5) , 1110-1117
- https://doi.org/10.1109/16.78386
Abstract
No abstract availableThis publication has 22 references indexed in Scilit:
- Molecular beam epitaxial growth of (100) oriented CdTe on Si (100) using BaF2-CaF2 as a bufferApplied Physics Letters, 1990
- The growth of high quality CdTe on GaAs by molecular beam epitaxyJournal of Vacuum Science & Technology A, 1990
- Photovoltaic lead-chalcogenide IR-sensor arrays on Si for thermal imaging applicationsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1990
- Properties of lattice mismatched IIa-fluorides on siliconThin Solid Films, 1990
- Progress in Compound‐Semiconductor‐on‐Silicon‐Heteroepitaxy with Fluoride Buffer LayersJournal of the Electrochemical Society, 1989
- Photovoltaic infrared sensors in heteroepitaxial PbTe on SiApplied Physics Letters, 1988
- Growth of lattice-mismatched stacked epitaxial CaF2-SrF2-BaF2 layers on (100) oriented Si substratesApplied Physics Letters, 1988
- Infrared photodiodes fabricated with Hg1−xCdxTe grown by molecular beam epitaxyApplied Physics Letters, 1988
- HgCdTe photovoltaic detectors on Si substratesApplied Physics Letters, 1987
- Molecular beam epitaxial growth of high structural perfection CdTe on Si using a (Ca,Ba)F2 buffer layerApplied Physics Letters, 1986