Molecular beam epitaxial growth of (100) oriented CdTe on Si (100) using BaF2-CaF2 as a buffer
- 10 September 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (11) , 1108-1110
- https://doi.org/10.1063/1.103506
Abstract
Epitaxial CdTe (100) has been grown on (100) oriented Si by molecular beam epitaxy using BaF2‐CaF2 as a buffer. Two‐dimensional (2‐D) growth of BaF2(100) is obtained using low‐temperature thermal cycles during growth. CdTe growth is also 2‐D above 270 °C substrate temperature and a 2×1 surface reconstruction indicating a Te‐stabilized surface is obtained. The growth is 3‐D at lower substrate temperatures. Good structural quality films showing sharp electron channeling patterns and pronounced photoluminescence at 77 K are obtained. The full width at half maximum of the band‐edge peak is 12 meV at 77 K.Keywords
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