Photoluminescence of CdTe films grown on BaF2 with PbTe buffer layers by hot-wall epitaxy
- 1 April 1989
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 171 (2) , 271-276
- https://doi.org/10.1016/0040-6090(89)90634-2
Abstract
No abstract availableThis publication has 25 references indexed in Scilit:
- A photoluminescence study of molecular beam epitaxy grown CdTe films on (001)InSb substratesApplied Physics Letters, 1985
- High resolution electron microscope study of epitaxial CdTe-GaAs interfacesApplied Physics Letters, 1985
- A study of the growth conditions necessary for reproducible preparation of high perfection CdTe films on InSb by MBEJournal of Vacuum Science & Technology B, 1985
- Summary Abstract: Growth of high quality (100)CdTe films on (100)GaAs substrates by molecular beam epitaxyJournal of Vacuum Science & Technology B, 1984
- Photoluminescence from CdTe/sapphire films prepared by molecular beam epitaxyJournal of Applied Physics, 1983
- (p/n) PbTe multiple-layer films prepared by a hot wall techniqueJournal of Applied Physics, 1981
- PbTe-Pb1−xSnxTe superlattices prepared by a hot wall techniqueJournal of Applied Physics, 1980
- Growth of PbTe films under near-equilibrium conditionsJournal of Applied Physics, 1977
- PbTe and Pb0.8Sn0.2Te epitaxial films on cleaved BaF2 substrates prepared by a modified hot-wall techniqueJournal of Applied Physics, 1976
- The use of a phase diagram as a guide for the growth of PbTe filmsApplied Physics Letters, 1975