PbTe and Pb0.8Sn0.2Te epitaxial films on cleaved BaF2 substrates prepared by a modified hot-wall technique
- 1 July 1976
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (7) , 3167-3171
- https://doi.org/10.1063/1.323111
Abstract
PbTe and Pb0.8Sn0.2Te epitaxial films have been grown on cleaved BaF2 substrates by a modified hot‐wall technique. Relatively fast growth rates of 3–5 μm/h have been used to prepare high‐quality epitaxial films between 5 and 13 μm in thickness. Both p‐ and n‐type films have been grown by temperature control of a separate Te reservoir included in the apparatus. Carrier concentrations and mobilities in the orders of 2×1016–7×1017/cm3 and 1–3.3×104 cm2/V sec, respectively, have been measured in the as‐grown films at 77 K. Pb0.8Sn0.2Te homojunction and PbTe‐Pb0.8Sn0.2Te heterojunction layers have been prepared. Diode elements engraved in the layers by mesa etching have shown R0A products between 19 and 38 Ω cm2 for heterojunction structures at 77 K.This publication has 11 references indexed in Scilit:
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