Lead telluride-lead tin telluride heterojunction diode array
- 28 February 1975
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 18 (2) , 121-125
- https://doi.org/10.1016/0038-1101(75)90095-7
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Surface morphology of liquid-phase epitaxial layersJournal of Applied Physics, 1973
- Improved surface quality of solution grown GaAs and Pb1−xSnxTe epitaxial layers: A new techniqueJournal of Crystal Growth, 1972
- Pb1−xSnxTe photovoltaic diodes and diode lasers produced by proton bombardmentSolid-State Electronics, 1972
- p-n Junction Photodiodes in PbTe Prepared by Sb+ Ion ImplantationApplied Physics Letters, 1972
- Capacitance-Voltage Characteristics of Metal Barriers on p PbTe and p InAs: Effects of the Inversion LayerJournal of Applied Physics, 1971
- n-p JUNCTION PHOTOVOLTAIC DETECTORS IN PbTe PRODUCED BY PROTON BOMBARDMENTApplied Physics Letters, 1971
- SPONTANEOUS AND LASER EMISSION FROM Pb1−xSnxTe DIODES PREPARED BY Sb DIFFUSIONApplied Physics Letters, 1970
- JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATUREApplied Physics Letters, 1970
- Growth and Characterization of Lead Telluride Epitaxial LayersJournal of the Electrochemical Society, 1970