n-p JUNCTION PHOTOVOLTAIC DETECTORS IN PbTe PRODUCED BY PROTON BOMBARDMENT
- 15 March 1971
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 18 (6) , 259-261
- https://doi.org/10.1063/1.1653655
Abstract
n‐p junction photovoltaic detectors in PbTe have been fabricated using proton bombardment to create the n‐type layer. At 77°K, zero‐bias resistance area products of 300 Ω cm2 were observed for diodes with dimensions as large as 15 mil square. Peak detectivities at 5 μm in reduced background as high as 3.3×1011 cm Hz1/2/W were observed. Diode quantum efficiencies were typically greater than 30% at 5 μm.Keywords
This publication has 1 reference indexed in Scilit:
- n-p JUNCTION PHOTODETECTORS IN InSb FABRICATED BY PROTON BOMBARDMENTApplied Physics Letters, 1970