p-n Junction Photodiodes in PbTe Prepared by Sb+ Ion Implantation
- 15 April 1972
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 20 (8) , 279-281
- https://doi.org/10.1063/1.1654149
Abstract
n‐p junction photovoltaic detectors in PbTe have been fabricated using Sb+ ion implantation to create the n‐type layer. At 77 °K, 15‐mil square diodes have had zero‐bias resistances as high as 15 MΩ for a resistance‐area product of 2.1×104 Ωcm2. Peak detectivities at 4.4 μm in reduced background as high as 1.6×1012 cmHz1/2/W were observed. Diode quantum efficiencies were typically 40% at 4.4 μm.Keywords
This publication has 2 references indexed in Scilit:
- n-p JUNCTION PHOTOVOLTAIC DETECTORS IN PbTe PRODUCED BY PROTON BOMBARDMENTApplied Physics Letters, 1971
- nGepGaAs HeterojunctionsSolid-State Electronics, 1966