Photoluminescence from CdTe/sapphire films prepared by molecular beam epitaxy
- 1 November 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (11) , 6785-6786
- https://doi.org/10.1063/1.331842
Abstract
Photoluminescence studies at 77 K are reported for CdTe/sapphire films prepared by molecular beam epitaxy. The CdTe/sapphire epilayers exhibited very bright photoluminescence spectra that were dominated by the near-edge emission band at 1.58 eV. The best CdTe/sapphire film proved to be the brightest source of luminescence of any CdTe specimen studied in our laboratories, including homoepitaxial films and bulk hydroplane polished samples. The CdTe/sapphire films also exhibited the best lateral uniformity as manifested by a nearly constant luminescence intensity over their surfaces. These results provide new evidence that high quality CdTe epitaxy on sapphire has been achieved.This publication has 5 references indexed in Scilit:
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- Growth of CdTe films on silicon by molecular beam epitaxyJournal of Applied Physics, 1983
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