Use of capacitance techniques in the study of two-dimensional layers in silicon mosfets
- 1 July 1984
- journal article
- Published by Elsevier in Surface Science
- Vol. 142 (1) , 339-340
- https://doi.org/10.1016/0039-6028(84)90332-7
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Capacitance Observations of Landau Levels in Surface QuantizationPhysical Review Letters, 1968