Characteristics of AlGaAs/GaAs quantum-well delta-doped channel FET (QUADFET)
- 1 January 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 37 (8) , 1924-1926
- https://doi.org/10.1109/16.57147
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- DC and AC characteristics of delta-doped GaAs FETIEEE Electron Device Letters, 1989
- Transport properties of two-dimensional electron gas systems in delta-doped Si:In0.53Ga0.47As grown by organometallic chemical vapor depositionApplied Physics Letters, 1989
- Experimental and theoretical mobility of electrons in δ-doped GaAsApplied Physics Letters, 1988
- Electron-mobility enhancement and electron-concentration enhancement in δ-doped n-GaAs at T=300KSolid State Communications, 1987
- Impurity scattering effects on electron transport in short GaAs channelsJournal of Applied Physics, 1985
- Self-consistent variational calculations and alloy scattering in semiconductor heterojunctionsSurface Science, 1984