Transport properties of two-dimensional electron gas systems in delta-doped Si:In0.53Ga0.47As grown by organometallic chemical vapor deposition
- 30 January 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (5) , 457-459
- https://doi.org/10.1063/1.100951
Abstract
We have investigated the transport properties of a two‐dimensional electron gas formed in delta‐doped In0.53 Ga0.47 As grown by metalorganic chemical vapor deposition technique. Very high free‐electron concentrations of 1.4×1013 and 9.6×1012 cm−2 have been obtained at 300 and 77 K, respectively. Hall mobilities of 9300 and 14 600 cm2 /V s were measured with carrier concentrations of 3.7×1012 and 3.0×1012 cm−2 at 300 and 77 K, respectively. This is a factor of 3 higher than is expected for homogeneously doped materials having a similar doping. Schubnikov–de Haas oscillations confirmed the two‐dimensional nature of the electronic structure in these delta‐doped materials, and electron effective masses were determined from cyclotron resonance measurements.Keywords
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