Growth mechanism of planar-type GaAs nanowhiskers
- 1 September 1997
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 15 (5) , 1685-1687
- https://doi.org/10.1116/1.589355
Abstract
The mechanism for the lateral growth of ultrathin GaAs whiskers is discussed in connection with the vapor–liquid–solid growth model. The observed growth rate shows that the migration of the source material plays an essential role in such whisker growth.Keywords
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