Suppressed diffusion of boron and carbon in carbon-rich silicon

Publisher Website
Google Scholar
Abstract
Transient enhanced diffusion of boron in silicon can be suppressed by substitutional carbon. We show here that diffusion of boron and carbon is strongly reduced in carbon-rich silicon, even when no supersaturation of interstitials due to implantation is present. Pronounced non-Fickian diffusion behavior was found for epitaxially grown-in carbon at concentrations well above its solid solubility. The experimentally observed suppression of B and C diffusion at high C concentrations is explained in terms of a recently proposed model that predicts an undersaturation of Si self-interstitials caused by diffusion of C out of C-rich regions.