Carbon-induced undersaturation of silicon self-interstitials
- 12 January 1998
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (2) , 200-202
- https://doi.org/10.1063/1.120684
Abstract
Carbon diffusion into silicon is well behaved and does not generate any nonequilibrium point defects. We show that, in contrast, the diffusion of carbon incorporated in silicon well above its solid solubility will cause an undersaturation of silicon self-interstitials, which in turn may cause retarded diffusion of boron. In addition, we predict that due to this undersaturation, the diffusion of built-in carbon spikes will lead to strongly non-Gaussian concentration profiles.Keywords
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