Modeling the diffusion of grown-in Be in molecular beam epitaxy GaAs
- 1 August 1995
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 78 (3) , 1595-1605
- https://doi.org/10.1063/1.360253
Abstract
No abstract availableThis publication has 23 references indexed in Scilit:
- Heavily doped GaAs(Be)/GaAlAs HBTs grown by MBE with high device performances and high thermal stabilityIEEE Transactions on Electron Devices, 1992
- High-transconductance p-channel AlGaAs/GaAs HFETs with low-energy beryllium and fluorine co-implantation self-alignmentIEEE Electron Device Letters, 1991
- Diffusion mechanism of zinc and beryllium in gallium arsenideJournal of Applied Physics, 1991
- Diffusion and deactivation characteristics in Be-implanted GaAsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1991
- Diffusion of implanted beryllium in n- and p-type GaAsApplied Physics Letters, 1989
- SUPREM 3.5-process modeling of GaAs integrated circuit technologyIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1989
- Anomalous redistribution of beryllium in GaAs grown by molecular beam epitaxyJournal of Applied Physics, 1985
- Control of Be diffusion in molecular beam epitaxy GaAsApplied Physics Letters, 1985
- Annealing studies of Be-doped GaAs grown by molecular beam epitaxyApplied Physics Letters, 1978
- Rapid zinc diffusion in gallium arsenideSolid-State Electronics, 1962