Synthesis of heteroepitaxial Si/CoSi2/Si structures by Co implantation into Si
- 22 August 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (8) , 669-671
- https://doi.org/10.1063/1.100641
Abstract
Heteroepitaxial Si/CoSi2/Si structures have been formed in both (100) and (111)Si by high‐dose implantation of Co. During the implantation, Co is incorporated in the Si lattice as CoSi2 with the same orientation as the Si substrate. Upon annealing the implanted Co distribution is transformed into an epitaxial Si/CoSi2/Si layered structure. Sputtering of Si during the implantation of Co was studied using an implanted Si3N4 marker layer. The Si/CoSi2/Si/Si3N4/Si multilayer structure that is formed in this way demonstrates the potential of the ion beam synthesis technique.Keywords
This publication has 6 references indexed in Scilit:
- Mesotaxy: Single-crystal growth of buried CoSi2 layersApplied Physics Letters, 1987
- Fabrication of buried layers of SiO2 and Si3N4 a using ion beam synthesisNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Silicon on Insulator Formed By O+ OR N+ Ion ImplantationMRS Proceedings, 1985
- High Dose Implantation of Nickel into SiliconMRS Proceedings, 1985
- Substrate-orientation dependence of the epitaxial regrowth rate from Si-implanted amorphous SiJournal of Applied Physics, 1978
- Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline TargetsPhysical Review B, 1969