High Dose Implantation of Nickel into Silicon
- 1 January 1985
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Ion beam and temperature annealing during high dose implantsApplied Physics Letters, 1985
- Formation of ion beam mixed silicides on Si (100) at elevated substrate temperaturesJournal of Applied Physics, 1985
- High quality silicon on insulator structures formed by the thermal redistribution of implanted nitrogenApplied Physics Letters, 1985
- Epitaxial growth of ZrSi2 on silicon with an ion beam mixing assisted schemeApplied Physics Letters, 1985
- The growth processes of thin film silicides in Si/Ni planar systemsThin Solid Films, 1985
- Metal Impurities near the SiO2 ‐ Si InterfaceJournal of the Electrochemical Society, 1984
- ION IMPLANTATION METALLURGYPublished by Elsevier ,1984
- Microstructural defects in laser recrystallized, graphite strip heater recrystallized and buried oxide silicon-on-insulator systems: A status reportJournal of Crystal Growth, 1983
- Transition metals in siliconApplied Physics A, 1983
- Improvement of crystalline quality of epitaxial Si layers by ion-implantation techniquesApplied Physics Letters, 1979