Ion beam and temperature annealing during high dose implants
- 15 July 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (2) , 138-140
- https://doi.org/10.1063/1.96240
Abstract
The regrowth of a Si amorphous layer under a masked region during an implant of 120 keV–7.5×1015 P+/cm2 at an average dose rate of 9.0 μA/cm2 has been measured by the channeling technique. The amorphous layer reorders epitaxially over ∼20 nm after the implant, in agreement with calculations based on the temperature dose rise and regrowth velocity. A single implant of 7.5×1015 P+/cm2 produces a nearly damage‐free region implying a regrowth rate enhanced by the large amount of mobile point defects generated in the collision cascade of the impinging ions.Keywords
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