Microstructural defects in laser recrystallized, graphite strip heater recrystallized and buried oxide silicon-on-insulator systems: A status report
- 2 October 1983
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 63 (3) , 559-582
- https://doi.org/10.1016/0022-0248(83)90168-9
Abstract
No abstract availableKeywords
This publication has 37 references indexed in Scilit:
- Lateral zone growth and characterization of device quality silicon-on-insulator wafersApplied Physics Letters, 1982
- Measurement of the near-surface crystallinity of silicon on sapphire by UV reflectanceJournal of Crystal Growth, 1982
- Subgrain boundaries in laterally seeded silicon-on-oxide formed by graphite strip heater recrystallizationApplied Physics Letters, 1982
- The microstructure of laterally seeded silicon-on-oxideJournal of Electronic Materials, 1982
- Device fabrication in {100} silicon-on-oxide produced by a scanning CW-laser-induced lateral seeding techniqueIEEE Transactions on Electron Devices, 1982
- Multiple SOI Structure Fabricate by High Dose Oxygen Implantation and Epitaxial GrowthJapanese Journal of Applied Physics, 1981
- Single Crystal Silicon‐on‐Oxide by a Scanning CW Laser Induced Lateral Seeding ProcessJournal of the Electrochemical Society, 1981
- Characteristics of MOSFETs fabricated in silicon-on-insulator material formed by high-dose oxygen ion implantationElectronics Letters, 1981
- Characteristics of MOSFETs fabricated in laser-recrystallized polysilicon islands with a retaining wall structure on an insulating substrateIEEE Electron Device Letters, 1980
- Ring oscillators fabricated in laser-annealed silicon-on-insulatorIEEE Electron Device Letters, 1980