Digital alloy AlAsSb/AlGaAsSb distributed Braggreflectors lattice matched to InP for 1.3 – 1.55µm wavelength range
- 20 July 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (15) , 1247-1248
- https://doi.org/10.1049/el:19950852
Abstract
The authors report a distributed Bragg reflector (DBR) consisting of 15.5 periods of AlAsSb and AlGaAsSb digital alloy with a peak reflectivity >95% at 1.46 µm. The DBR is grown by molecular beam epitaxy on an InP substrate.Keywords
This publication has 3 references indexed in Scilit:
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- Highly reflective, long wavelength AlAsSb/GaAsSb distributed Bragg reflector grown by molecular beam epitaxy on InP substratesApplied Physics Letters, 1995
- Chemical beam epitaxially grown InP/InGaAsP interference mirror for use near 1.55 μm wavelengthApplied Physics Letters, 1987