A Computer Analysis of Effects of Annealing on InP Insulator-Semiconductor Interface Properties Using MIS C-V Curves

Publisher Website
Google Scholar
Abstract
The effects of annealing on the distributions of interface states at the I-S interface were investigated by analyzing the C-V characteristics of as-grown and annealed Al2O3/native oxide/InP MIS capacitors using a self-consistent computer simulation program. It is shown that interface states form a continuum of donor-like and acceptor-like states continuously distributed both in energy and in space. The state density distribution before and after annealing maintains the same functional form, which is U-shaped in energy and exponentially decaying in space. The charge neutrality point dividing donor-like and acceptor-like states occurs at the U-shaped minimum. Annealing reduces the spatial extension of states, the U-shape curvature and the magnitude of density. However, the energy position of the charge neutrality point remains remarkably invariant.