MBE growth of AlGaN/GaN HEMTs with high power density
- 5 December 2002
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 38 (25) , 1740-1741
- https://doi.org/10.1049/el:20021102
Abstract
RF-plasma MBE has been used for the growth of undoped Al0.25Ga0.75N/GaN HEMT structures on semi-insulating SiC substrates. Devices with a 1.5 µm gate length have an fT of 10 GHz and have demonstrated an output power density of 6.3 W/mm at 2 GHz. Details of the growth process and device results are presented.Keywords
This publication has 2 references indexed in Scilit:
- AlGaN/GaN HEMTs-an overview of device operation and applicationsProceedings of the IEEE, 2002
- GaN HFETs on SiC Substrates Grown by Nitrogen Plasma MBEPhysica Status Solidi (a), 2001