Effect of polysilicon gate type on the flatband voltage shift for ultrathin oxide-nitride gate stacks
- 1 April 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 21 (4) , 170-172
- https://doi.org/10.1109/55.830971
Abstract
In this work, we demonstrate that the magnitude of flatband voltage (V/sub FB/) shift for ultrathin (<2 nm) silicon dioxide-silicon nitride (ON) gate stacks in MOSFET's depends on the Fermi level position in the gate material. In addition, a fixed positive charge at the oxide-nitride interface was observed.Keywords
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