Ultrathin oxide-nitride gate dielectric MOSFET's
- 1 April 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 19 (4) , 106-108
- https://doi.org/10.1109/55.663529
Abstract
The first ultrathin oxide-nitride (O-N) gate dielectrics with oxide equivalent thickness of less than 2 nm have been deposited and characterized in n-MOSFET's. The O-N gates, deposited by remote plasma-enhanced CVD, demonstrate reduced gate leakage when compared with oxides of equivalent thickness while retaining comparable drive currents.Keywords
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