1.5 nm direct-tunneling gate oxide Si MOSFET's
- 1 January 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 43 (8) , 1233-1242
- https://doi.org/10.1109/16.506774
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
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