Indium channel implants for improved MOSFET behavior at the 100-nm channel length regime
- 1 November 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (11) , 2605
- https://doi.org/10.1109/16.43706
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Reduction of channel hot-electron-generated substrate current in sub-150-nm channel length Si MOSFET'sIEEE Electron Device Letters, 1988
- Electron velocity overshoot at room and liquid nitrogen temperatures in silicon inversion layersIEEE Electron Device Letters, 1988
- Electron velocity overshoot in sub-100-nm channel length metal–oxide–semiconductor field-effect transistors at 77 and 300 KJournal of Vacuum Science & Technology B, 1988