Electron velocity overshoot at room and liquid nitrogen temperatures in silicon inversion layers
- 1 February 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (2) , 94-96
- https://doi.org/10.1109/55.2051
Abstract
Effective electron velocities in silicon MOSFETs exceeding the bulk saturation values of 10/sup 7/ cm/s at room temperature and 1.3*10/sup 7/ cm/s at liquid-nitrogen temperature are inferred. This conclusion suggests that electron velocity overshoot occurs over a large portion of the device channel length. To infer this phenomenon, submicrometer-channel-length Si MOSFETs with lightly doped inversion layers were fabricated. These devices have low field mobility of 450 cm/sup 2//V-s and showed only slight short-channel effects. Effective carrier velocities are calculated from the saturated transconductance g/sub m/ at V/sub DS/=1.5 V after correction for parasitic resistances of source and drain.Keywords
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