The physics of excess electron velocity in submicron-channel FET’s

1 November 1977

journal article
research article
Published by AIP Publishing in Journal of Applied Physics

Vol. 48 (11) , 4791-4798
https://doi.org/10.1063/1.323496

Abstract

A transport‐equation model is used to examine the processes by which the velocity of an electron injected from a source contact into an n channel can overshoot the saturated drift velocity by a factor of 3 or more (depending upon the material). The results agree semiquantitatively with earlier Monte Carlo calculations and show that the excess electron velocity can persist for distances on the order of 1 μm, with obvious benefit to the transit time of the carrier (and hence the f_T) in submicron‐channel FET’s. Data for Ge, Si, and GaAs are given.

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