Voltage-current characteristics of GaAs J-FET's in the hot electron range
- 31 October 1970
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 13 (10) , 1415-1424
- https://doi.org/10.1016/0038-1101(70)90175-9
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- General theory for pinched operation of the junction-gate FETSolid-State Electronics, 1969
- Temperature dependence of the saturation current of MOST'sIEEE Transactions on Electron Devices, 1968
- Characteristics of junction field effect devices with small channel length-to-width ratiosSolid-State Electronics, 1967