Cener for advanced electronic materials processing
- 1 January 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 81 (1) , 42-59
- https://doi.org/10.1109/jproc.1993.752025
Abstract
No abstract availableKeywords
This publication has 29 references indexed in Scilit:
- Rapid thermal chemical vapor deposition of in-situ boron doped polycrystalline SIxGe1-xJournal of Electronic Materials, 1992
- A comparison of MOS gate structures formed by depositing polycrystalline silicon on thin oxides using conventional low pressure chemical vapor deposition and rapid thermal chemical vapor depositionJournal of Electronic Materials, 1991
- Formation of Inorganic Films by Remote Plasma-Enhanced Chemical-Vapor DepositionPublished by Elsevier ,1991
- Rapid Thermal Chemical Vapor Deposition of Germanium and Germanium/Silicon Alloys on Silicon: New Applications in the Fabrication of MOS TransistorsMRS Proceedings, 1991
- Selective low-pressure chemical vapor deposition of Si1−xGex alloys in a rapid thermal processor using dichlorosilane and germaneApplied Physics Letters, 1990
- Rapid thermal chemical vapor deposition of germanium on silicon and silicon dioxide and new applications of ge in ULSI technologiesJournal of Electronic Materials, 1990
- Si(100) Surface Preparation by In-Situ or in-Vacuo Exposure to Remotely Plasma-Generated Atomic Hydrogen: Applications to Deposited SiO2 and Epitaxial Growth of SiMRS Proceedings, 1990
- Deposition properties of silicon films formed from silane in a vertical-flow reactorJournal of Vacuum Science & Technology B, 1986
- Growth and Physical Properties of LPCVD Polycrystalline Silicon FilmsJournal of the Electrochemical Society, 1984
- Optical Evaluation of Polycrystalline Silicon Surface RoughnessJournal of the Electrochemical Society, 1979