A comparison of MOS gate structures formed by depositing polycrystalline silicon on thin oxides using conventional low pressure chemical vapor deposition and rapid thermal chemical vapor deposition
- 1 March 1991
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 20 (3) , 251-259
- https://doi.org/10.1007/bf02651901
Abstract
No abstract availableKeywords
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