Minority-carrier properties of thin epitaxial silicon films fabricated by limited reaction processing
- 15 June 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (12) , 4180-4182
- https://doi.org/10.1063/1.336679
Abstract
Generation lifetimes and diode properties have been measured in epitaxial silicon films grown by limited reaction processing. Generation lifetimes from 1.4 to 94 μs were measured by observing the recovery of MOS capacitors from deep depletion. Planar diodes fabricated in both n- and p-type epitaxial films show excellent behavior in both forward and reverse bias. p-n junctions formed by growing p-type epitaxial silicon directly on an n-type substrate show no evidence of excessive interface defects or traps.This publication has 5 references indexed in Scilit:
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- Refinements in the measurement of depleted generation lifetimeIEEE Transactions on Electron Devices, 1983
- A modified linear sweep technique for MOS-C generation rate measurementsIEEE Transactions on Electron Devices, 1975