In-situ processing using rapid thermal chemical vapor deposition
- 1 November 1989
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 18 (6) , 731-736
- https://doi.org/10.1007/bf02657526
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Limited reaction processing: In-situ metal—oxide—semiconductor capacitorsIEEE Electron Device Letters, 1986
- Limited reaction processing: Silicon epitaxyApplied Physics Letters, 1985
- Rapid thermal processing of thin gate dielectrics. Oxidation of siliconIEEE Electron Device Letters, 1985
- Electrical breakdown in thin gate and tunneling oxidesIEEE Transactions on Electron Devices, 1985