Rapid thermal chemical vapor deposition of in-situ boron doped polycrystalline SIxGe1-x
- 1 January 1992
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 21 (1) , 61-64
- https://doi.org/10.1007/bf02670921
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Selective low-pressure chemical vapor deposition of Si1−xGex alloys in a rapid thermal processor using dichlorosilane and germaneApplied Physics Letters, 1990
- Heterojunction bipolar transistors using Si-Ge alloysIEEE Transactions on Electron Devices, 1989
- Low Pressure Chemical Vapor Deposition of In Situ Boron‐Doped PolysiliconJournal of the Electrochemical Society, 1988
- A Model of Growth Rate Nonuniformity in the Simultaneous Deposition and Doping of a Polycrystalline Silicon Film by LPCVDJournal of the Electrochemical Society, 1987
- Nonequilibrium boron doping effects in low-temperature epitaxial silicon filmsApplied Physics Letters, 1987
- Boron Doping Effect on Silicon Film Deposition in the Si2 H 6 ‐ B 2 H 6 ‐ He Gas SystemJournal of the Electrochemical Society, 1986
- Phosphorus‐Doped Polycrystalline Silicon via LPCVD: II . Surface Interactions of the Silane/Phosphine/Silicon SystemJournal of the Electrochemical Society, 1984