Ultrathin device quality oxide-nitride-oxide heterostructure formed by remote plasma enhanced chemical vapor deposition
- 25 April 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (17) , 2226-2228
- https://doi.org/10.1063/1.111681
Abstract
In this letter, we report our study on an oxide‐nitride‐oxide (ONO) heterostructure as a dielectric material in a metal‐insulator‐semiconductor field‐effect transistor with Si as a semiconductor. The electrical properties of the ONO dielectrics have been correlated with: (i) the process related effects; (ii) the accumulation of N atoms and its bonding with Si at the SiO2/Si interface; and (iii) the chemical bonding within the nitride layers. By combining the remote plasma enhanced chemical vapor deposition and the rapid thermal annealing process, the device quality ONO structure with an oxide equivalent thickness of 4.7 nm has been successfully manufactured.Keywords
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