Low-temperature furnace-grown reoxidized nitrided oxide gate dielectrics as a barrier to boron penetration
- 1 April 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 13 (4) , 217-219
- https://doi.org/10.1109/55.145026
Abstract
Reoxidized nitrided oxide (ROXNOX) gate dielectrics can be used to block the diffusion of boron into the MOS channel region. However, fixed oxide charge annealing can mask the effects of boron in the channel, a particularly important consideration for low-temperature gate oxides. The authors separate the effect of fixed charge annealing from the effect of boron diffusion and demonstrate that a low-temperature furnace-grown reoxidized nitrided oxide has a substantial advantage over conventional gate oxides in protecting the channel from boron over a wide range of annealing times and temperatures. They also address the issue of fixed charge annealing in low-temperature reoxidized nitrided oxides and present an approach to maintain acceptable gate dielectric quality while preserving a low D-t product for integration into a scaled dual-gate CMOS process.Keywords
This publication has 13 references indexed in Scilit:
- Effects of boron penetration and resultant limitations in ultra thin pure-oxide and nitrided-oxide gate-filmsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- The use of ultrathin reoxidized nitrided gate oxide for suppression of boron penetration in BF/sub 2//sup +/-implanted polysilicon gated p-MOSFETsIEEE Electron Device Letters, 1991
- A comprehensive study on p/sup +/ polysilicon-gate MOSFET's instability with fluorine incorporationIEEE Transactions on Electron Devices, 1990
- The effects of boron penetration on p/sup +/ polysilicon gated PMOS devicesIEEE Transactions on Electron Devices, 1990
- Electrical and physical properties of ultrathin reoxidized nitrided oxides prepared by rapid thermal processingIEEE Transactions on Electron Devices, 1989
- Inversion layer mobility of MOSFETs with nitrided oxide gate dielectricsIEEE Transactions on Electron Devices, 1988
- Optimization of low-pressure nitridation/reoxidation of SiO/sub 2/ for scaled MOS devicesIEEE Transactions on Electron Devices, 1988
- Dependence of the work-function difference between the polysilicon gate and silicon substrate on the doping level in polysiliconIEEE Transactions on Electron Devices, 1985
- Low Pressure Nitrided‐Oxide as a Thin Gate Dielectric for MOSFET'sJournal of the Electrochemical Society, 1983
- Barrier heights at the polycrystalline silicon-SiO2 interfaceJournal of Applied Physics, 1981