A comprehensive study on p/sup +/ polysilicon-gate MOSFET's instability with fluorine incorporation

This publication has 14 references indexed in Scilit:

• Negative charge induced degradation of PMOSFETS with BF ₂ -implanted p ⁺ -poly gate
  Electronics Letters, 1989
• High-performance salicide shallow-junction CMOS devices for submicrometer VLSI application in twin-tub VI
  IEEE Transactions on Electron Devices, 1989
• Hot-electron immunity of SiO/sub 2/ dielectrics with fluorine incorporation
  IEEE Electron Device Letters, 1989
• The effect of fluorine in silicon dioxide gate dielectrics
  IEEE Transactions on Electron Devices, 1989
• Anomalous C-V characteristics of implanted poly MOS structure in n/sup +//p/sup +/ dual-gate CMOS technology
  IEEE Electron Device Letters, 1989
• Hot-electron hardened Si-gate MOSFET utilizing F implantation
  IEEE Electron Device Letters, 1989
• Effect of fluorine in chemical-vapor-deposited tungsten silicide film on electrical breakdown of SiO2 film
  Journal of Applied Physics, 1987
• Defect structure and generation of interface states in MOS structures
  Solid-State Electronics, 1986
• A symmetric submicron CMOS technology
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1986
• Design tradeoffs between surface and buried-channel FET's
  IEEE Transactions on Electron Devices, 1985