Hot-electron hardened Si-gate MOSFET utilizing F implantation
- 1 April 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 10 (4) , 141-143
- https://doi.org/10.1109/55.31697
Abstract
A technique is presented for incorporating fluorine (F) into the gate-oxide film, and the subsequent improvement of channel-hot-electron hardness of the resulting MOSFET is reported. This technique uses low-energy F implantation onto the surface of the polysilicon gate-electrode, followed by annealing at 950 degrees C to diffuse F into the gate SiO/sub 2/ toward the SiO/sub 2//Si interface. The improved hot-electron hardness is explained by a model involving a strain relaxation near the SiO/sub 2//Si interface by fluorine incorporation that results from Si-F bond formation.Keywords
This publication has 7 references indexed in Scilit:
- Radiation and hot-electron effects on SiO2/Si interfaces with oxides grown in O2 containing small amounts of trichloroethaneApplied Physics Letters, 1988
- Dramatic improvement of hot-electron-induced interface degradation in MOS structures containing F or Cl in SiO/sub 2/IEEE Electron Device Letters, 1988
- Radiation Response of MOS Capacitors Containing Fluorinated OxidesIEEE Transactions on Nuclear Science, 1987
- Hot-electron induced interface traps in metal/SiO2/Si capacitors: The effect of gate-induced strainApplied Physics Letters, 1986
- Hot-electron-induced MOSFET degradation—Model, monitor, and improvementIEEE Transactions on Electron Devices, 1985
- An As-P(n+-n-)double diffused drain MOSFET for VLSI'sIEEE Transactions on Electron Devices, 1983
- Radiation-Induced Defects in SiO2 as Determined with XPSIEEE Transactions on Nuclear Science, 1982