Radiation-Induced Defects in SiO2 as Determined with XPS
- 1 December 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 29 (6) , 1462-1466
- https://doi.org/10.1109/tns.1982.4336387
Abstract
Device quality gate oxides (~ 850 Å) grown on Si (100) substrates are irradiated with 0 - 20 eV electrons during in situ XPS measurements. These structures have been thinned stepwise to 25 to 60 Å using a relatively benign wet-chemical depth-profiling procedure. An analytical method based on oxide/substrate intensity ratios is used to deduce the product of the atomic number density (D) and the electron mean free path (λ) as a function of depth for these structures. Samples showing a wide variety of hole trapping efficiencies were examined. Si+3 species are formed in the region of the Si/SiO2 interface and are observed during the course of their relaxation and annihilation. These formation results are correlated with the presence of strained Si-O-Si bonds at the interfaces. Radiation hard and soft structures show different strained bond distributions in the interfacial region. The direct observation of bond cleavage and bond strain gradients in these samples is used to extend silica devitrification models to explain the generation of fixed oxide charge and interface states. This bond strain gradient (BSG) model is shown to be consistent with a variety of experimental EPR and electrical observations of hole- and electron-trap generation by ionizing radiation.Keywords
This publication has 29 references indexed in Scilit:
- The chemical structure of trapped charge sites formed at the Si/SiO2 interface by ionizing radiation as determined by XPSJournal of Vacuum Science and Technology, 1982
- Physical and chemical properties of SiSiO2 transition regionsSurface Science, 1980
- REDUCED OXIDATION STATES AND RADIATION-INDUCED TRAP GENERATION AT Si/SiO2 INTERFACEPublished by Elsevier ,1980
- XPS Studies of Structure-Induced Radiation Effects at the Si/SiO2 InterfaceIEEE Transactions on Nuclear Science, 1980
- A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS StructuresIEEE Transactions on Nuclear Science, 1980
- High-Resolution X-Ray Photoelectron Spectroscopy as a Probe of Local Atomic Structure: Application to Amorphous Siand the Si-SiInterfacePhysical Review Letters, 1979
- Morphology and electronic structure of Si–SiO2 interfaces and Si surfacesJournal of Vacuum Science and Technology, 1979
- DEFECTS AND IMPURITIES IN α-QUARTZ AND FUSED SILICAPublished by Elsevier ,1978
- CHEMICAL STRUCTURE OF THE TRANSITIONAL REGION OF THE SiO2/Si INTERFACEPublished by Elsevier ,1978
- Experimental Observations of the Chemistry of the SiO2/Si InterfaceIEEE Transactions on Nuclear Science, 1977