Temperature and field dependence of carrier mobility in MOSFETs with reoxidized nitrided oxide gate dielectrics
- 31 January 1992
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 35 (1) , 27-32
- https://doi.org/10.1016/0038-1101(92)90299-r
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Channel hot-carrier stressing of reoxidized nitrided oxide p-MOSFETsIEEE Transactions on Electron Devices, 1991
- Extraction of MOSFET carrier mobility characteristics and calibration of a mobility model for numerical device simulationSolid-State Electronics, 1990
- Gate bias polarity dependence of charge trapping and time-dependent dielectric breakdown in nitrided and reoxidized nitrided oxidesIEEE Electron Device Letters, 1989
- Universality of mobility-gate field characteristics of electrons in the inversion charge layer and its application in MOSFET modelingIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1989
- Improved transconductance under high normal field MOSFETs with ultrathin nitrided oxidesIEEE Electron Device Letters, 1989
- Inversion layer mobility of MOSFETs with nitrided oxide gate dielectricsIEEE Transactions on Electron Devices, 1988
- Charge-trapping properties of ultrathin nitrided oxides prepared by rapid thermal annealingIEEE Transactions on Electron Devices, 1988
- Short- and long-term reliability of nitrided oxide MISFETsIEEE Transactions on Electron Devices, 1988
- Optimization of low-pressure nitridation/reoxidation of SiO/sub 2/ for scaled MOS devicesIEEE Transactions on Electron Devices, 1988
- Mobility Degradation of Nitrided Oxide MISFET'sJournal of the Electrochemical Society, 1988