Short- and long-term reliability of nitrided oxide MISFETs
- 1 July 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (7) , 929-934
- https://doi.org/10.1109/16.3347
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Electrical properties of nitrided-oxide systems for use in gate dielectrics and EEPROMPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1983
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967